APCVD1 Chemical Vapor Deposition Types of CVD Properties Advantages Disadvantages APCVD - 76~760 Torr - Chemical raction by thermal energy - Used in SiO2 deposition - Coldwall Reactor - Low temperature - Simple reactor - Fast Deposition Rate (70nm/min) - Poor step coverage - 다량의 Carrier gas waste - Particle Contamination - Low throughput (cause of wafer loading) - Frequent Cleaning Required LPCVD - Low pressure (0.25~2Torr) - 1.. 2023. 5. 4. 이전 1 다음
