Ki Hyuk Han
Post-Doctoral Researcher
Center for Semiconductor Technology, Korea Institute of Science and Technology
Seoul, South Korea | rlgur2571@gmail.com | gur2571@kist.re.kr
LinkedIn | Google Scholar
EXPERIENCE&SKILLS
[Nanoscale Device Fabrication & Process Integration, Optimization]
1. Executed end-to-end nanofabrication process flow(*)
2. Improved lift-off yield to ~70% through ER undercut profile engineering(*)
3. Reduced lift-off process cycle time (5 → 2 min/device) by integrating wet lift-off process(*)
4. Optimized etch condition through DOE, improving performance from <100% to ~200%(*)
[Electrical Characterization & Analysis of Fabricated Devices]
1. Demonstrated random telegraph noise behavior in stochastic MTJ devices
2. Conducted statistical analysis of device electrical measurements across stack variations
[Probabilistic Computing]
1. Hardware-level implementation of stochastic MTJ behavior for QUBO problems
[Spintronics Physics]
1. Spin–Orbit Torque Characterization in sputtered Bi2Se3
2. RF circuit analysis for spin-torque ferromagnetic resonance measurement
[Equipment Maintenance]
1. Maintenance of high-vacuum chambers, maintaining low 10-8 Torr in lab environment
PUBLICATIONS
1 st Author Publications
- Voltage-Circuit Analysis in Spin-Torque Ferromagnetic Resonance, APL Mater. 13, 101115 (2025)
- 확률연산 컴퓨팅을 위한 랜덤 자기 터널 접합, J. Korean Magn. Soc. 35(3), 97 (2025)
- Multi-level probabilistic computing: application to the multiway number partitioning problems, Sci. Rep. 15, 28881 (2025)
- Probabilistic computing enabled by continuous random numbers sampled from in-plane magnetized stochastic magnetic tunnel junctions, Appl. Phys. Lett. 125, 142402 (2024)
- Gate Control of Spin–Orbit Torque in a Sputtered Bi2Se3/Ni81Fe19 Device, ACS Appl. Electron. Mater. 5, 5, 2725 (2023)
- Variations in stochastic magnetic tunnel junctions, physica status solidi (a), (in-progress, invited via ICAE conference)
Co-author Publications
- Perpendicular standing spin waves in AuPt/GdFeCo induced by spin-orbit torques, Yun et al., Commun. Phys. 8, 516 (2025)
- Observation of Rashba Effect and Nonreciprocal Transport in Bi2Te3, Ahn et al., Electron. Mater. Lett. 21, 420 (2025)
- Spin–Charge Conversion-Based Artificial Synaptic Device for Neuromorphic Computing, Kim et al., ACS Appl. Electron. Mater. 7, 1, 571 (2024)
- Contributions of interfacial spin–orbit coupling to magnetic and spintronic properties in AuPt/ferromagnet bilayer,s Yun et al., Appl. Phys. Lett. 125, 072403 (2024)
- Investigation of magnetic properties of Pt/CoFeB/MgO layers using angle-resolved spin-torque ferromagnetic resonance spectroscopy, Yun et al., J. Appl. Phys. 131, 243904 (2022)
- Demonstration of in-plane magnetized stochastic magnetic tunnel junction for binary stochastic neuron, Kim et al., AIP Advances 12, 075104 (2022)
- Room-Temperature Nonreciprocal Charge Transport in an InAs-Based Rashba Channel, Ahn et al., ECS J. Solid State Sci. Technol. 11, 045011 (2022)
Conference Presentations
- “Fabrication Variation on Stochastic MTJ”, 8th International Conference on Advanced Electromaterials (2025)
- “Conventional and Unconventional Spin-Orbit Torques in Single Ferromagnetic Layers”, The 2025 Joint MMM-Intermag Conference (2025)