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Furthermore, it has been recently demonstrated experimentally [39] and by micromagnetic simulations [40] that the 3T-MTJ devices can switch very fast, ~1 ns, below the “incubation delay” mentioned above. The fast switching of the 3T-MTJ devices is attributed to the role of the Oersted field (generated by the writing current) and/or any SHE-induced field-like effects in the evolution and reversal of magnetic domains in the FM free layer
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